Solution Processed Polymer Near-Infrared Photodiode With Electron and Hole Blockers
Chi Hang Cheung, Do Young Kim, Jegadesan Subbiah, Chad M Amb, John R Reynolds, Franky So
IEEE TRANSACTIONS ON ELECTRON DEVICES | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | Published : 2014
A solution-processed polymer near-infrared photo-detector with charge blocking layers is reported using a low-bandgap polymer, poly[(4,4'-bis(2-ethylhexyl)dithieno [3, 2-b:2',3'-d]silole)-2,6-diyl-alt-(2,1,3-benzothiadiazole)4,7-diyl]. Zinc oxide nanoparticles and poly[(9,9'-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl))diphenylamine)] are used as a hole blocking layer and an electron blocking layer, respectively. A maximum detectivity of (2× 1013) Jones is achieved with a 330-nm-thick photoactive layer that absorbs 98% of the incident light at 780 nm.
Awarded by U.S. Department of Defense, Office of Naval Research, Arlington, VA, USA
This work was supported by the U.S. Department of Defense, Office of Naval Research, Arlington, VA, USA, under Grant N00014-14-1-0173. The work of D. Y. Kim and F. So was supported by the NanoHoldings LLC, Norwalk, CT, USA. The review of this paper was arranged by Editor I. Kymissis.