Microelectronic junctions in arsenian pyrite due to impurity and mixed sulfide heterogeneity

Abstract

Impurities and crystal defects within the semiconducting bulk of a metal sulfide introduce energy levels within the forbidden bandgap. These levels in turn control semiconducting type and local electrical properties within single and multi-phased sulfide assemblages. Heterogeneity in sulfide semiconductivity linked to these impurities can lead to p-n micro-junction formation and potential distributions near the surface that may alter redox reactivity. Secondary gold ore genesis via a micro-galvanic effect related to heterogeneity has in the past been hypothetically linked to such micro-junctions. Understanding these regions and their interaction with weathering fluids in the regolith for exa..