Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample
M Lesik, J-P Tetienne, A Tallaire, J Achard, V Mille, A Gicquel, J-F Roch, V Jacques
Appl. Phys. Lett. | AMER INST PHYSICS | Published : 2014
Awarded by European Community
Awarded by French Agence Nationale de la Recherche through the ADVICE
The authors would like to thank I. N. Kupriyanov and Y. N. Palyanov from the Sobolev Institute of Geology and Mineralogy (Novosibirsk) for providing the high-quality (111) high pressure high temperature (HPHT) substrates used for CVD growth in this study, and P. Maletinsky for fruitful discussions. The research has been partially funded by the European Community's Seventh Framework Programme (FP7/2007-2013) under Grant Agreement No. 611143 (DIADEMS project) and by the French Agence Nationale de la Recherche through the ADVICE project (ANR-2011-BS04-021-03).