Journal article

Multimillion-atom modeling of InAs/GaAs quantum dots: interplay of geometry, quantization, atomicity, strain, and linear and quadratic polarization fields

Shaikh Ahmed, Sasi Sundaresan, Hoon Ryu, Muhammad Usman

JOURNAL OF COMPUTATIONAL ELECTRONICS | SPRINGER | Published : 2015

Abstract

Electronic structure and optical properties of self-assembled quantum dots strongly depend on an intricate interplay of the quantum mechanical size quantization and the atomistic built-in/internal electrostatic fields in the underlying material system. Specifically, built-in fields in zincblende quantum dots originate mainly from: (1) fundamental crystal atomicity and the interfaces between two dissimilar materials, (2) microscopic distribution of strain, and (3) the piezoelectric polarization. In this paper, we first study the origin and nature of these internal fields in InAs/GaAs quantum dots having three different geometries, namely, box, dome, and pyramid. We then quantify and delineate..

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University of Melbourne Researchers

Grants

Awarded by US National Science Foundation


Awarded by Directorate For Engineering


Funding Acknowledgements

This work is supported by The US National Science Foundation Grant No. 1102192. Computational resources on XSEDE and ORNL Jaguar (through the 2009 ORAU HPC Award) platforms were used for part of this work.