Feasibility of a CWDM-based in-situ monitoring system for characterizing porous silicon growth
A Keating, T James, C Musca
2007 Joint International Conference on Optical Internet and Australian Conference on Optical Fibre Technology, COIN-ACOFT 2007 | Published : 2007
A method to determine porous silicon index and thickness during growth is proposed. An rms accuracy of 0.3 and 80 run for the index and thickness, respectively was estimated based on a synthetic reflectance model including intensity and thermal noise.