Conference Proceedings
The effect of ion-beam induced strain on the nucleation density of chemical vapour deposited diamond.
PS Weiser, S Prawer, KW Nugent, AA Bettiol, LI Kostidis, SP Dooley, DN Jamieson, JS Williams (ed.), RG Elliman (ed.), MC Ridgway (ed.)
ION BEAM MODIFICATION OF MATERIALS | ELSEVIER SCIENCE PUBL B V | Published : 1996
Abstract
The effect of ion implantation on the nucleation of CVD diamond on silicon and diamond substrates has been investigated. The strategy employed is to create laterally confined regions of strain in the substrates by focused MeV implantation of light ions. Raman Microscopy has been employed to obtain spatially resolved maps of the strain in these implanted regions. On diamond substrates a homo-epitaxial CVD diamond film was grown on top of both the implanted and unimplanted regions of the substrate. Raman analysis of the film grown on top of the implanted region revealed it to be under slightly tensile strain as compared to that grown on the unimplanted diamond substrate. The film deposited on ..
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