Journal article

Confirmation of proton beam bending in graded Si1-xGex/Si layers using ion channeling

DG de Kerckhove, MBH Breese, PJM Smulders, DN Jamieson

APPLIED PHYSICS LETTERS | AMER INST PHYSICS | Published : 1999

Abstract

A graded composition Si1-xGex/Si [001] layer, which has recently been proposed as a method for bending and extracting protons from high-energy particle accelerators, has been studied by angle-resolved ion channeling analysis using focused MeV proton and He+ beams. Backscattering spectrometry confirms that the composition is linearly graded and a maximum Ge concentration of 0.16 was measured at the epilayer surface. Off-normal planes {111} are curved with respect to the substrate by a total angle of 0.332° and efficient bending of channeled particles along the curved planes and into the substrate is confirmed. © 1999 American Institute of Physics.

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