Conference Proceedings
Modification of the electrical response of diamond using MeV-Ion implantation and pulsed laser annealing
RJ Walker, S Prawer, DN Jamieson, R Kalish, JS Williams (ed.), RG Elliman (ed.), MC Ridgway (ed.)
ION BEAM MODIFICATION OF MATERIALS | ELSEVIER SCIENCE PUBL B V | Published : 1996
Abstract
It has recently been demonstrated that pulsed lasers can be used to anneal MeV radiation damage in diamond. In the present work we report on the electrical response of diamond which has undergone MeV As implantation followed by pulsed laser annealing. The current-voltage characteristics of Mo/Au contacts deposited on the implanted and the implanted and annealed portions of the diamond are compared, together with measurements of the resistance as a function of temperature.