Nuclear microprobe analysis of Hg1-xCdxTe metal-semiconductor-metal detectors on substrates of GaAs and GaAs/Si

Abstract

The ability of the nuclear microprobe with a 2 /am focused beam of MeV He+ ions to analyze the active region of individual Hg1_xCdxTe metal-semiconductor-metal (MSM) detectors has been demonstrated. Details of the channeling of Hgj _xCdxTe by Rutherford backscattering spectrometry and the incidence of defects imaged by channeling contrast microscopy were correlated with the performance of devices in a number of arrays. A series of linear growth defects was identified in the active region of some devices using channeling contrast microscopy. The channeling spectra that were extracted from these defective regions have shown a higher value of Xmm=24% (the ratio of backscattered particle yield w..