Structural and electrical characterisation of semiconductor materials using a nuclear microprobe

Abstract

High-resolution imaging techniques (submicron) have not traditionally been the domain of MeV ions. Instead, this domain is occupied by a vast array of techniques that utilise scanned low-energy ion beams (keV ion microprobe), electrons (transmission or scanning electron microscopy), light (near field microscopy) or all variants of scanning probe microscopies. Techniques that utilise focused X-rays are also developing. Now, with a nuclear microprobe, high-energy ion beams have begun to enter this domain, bringing a range of unique techniques for making images. With a MeV ion beam focused to a probe smaller than 1 μm, conventional techniques like Rutherford (and non-Rutherford) backscattering ..