Journal article

Elliptical silicon nanowire photodetectors for polarization-resolved imaging

Hyunsung Park, Kenneth B Crozier

OPTICS EXPRESS | OPTICAL SOC AMER | Published : 2015

Abstract

Polarization-resolved imaging offers many advantages over conventional imaging because it provides additional information on materials and scenes. In this study, we present an image sensor pixel for polarization-resolved imaging based on an all-silicon nanowire device. As the structure has an intrinsically polarization-dependent response, it is not necessary to employ a polarizer. We fabricate pixels consisting of etched vertical silicon nanowires with elliptical cross-sections that incorporate vertical p-i-n junctions. Our photocurrent measurement reveals that the spectral responsivities are dependent on the polarization state of incident light. Polarization-resolved imaging is performed wi..

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University of Melbourne Researchers

Grants

Awarded by National Science Foundation (NSF)


Awarded by Australian Research Council


Awarded by Div Of Electrical, Commun & Cyber Sys


Funding Acknowledgements

This work was supported in part by the National Science Foundation (NSF, grant no. ECCS-1307561), by the Australian Research Council's Discovery Projects funding scheme (project number DP150103736) and by the Victorian Endowment for Science, Knowledge and Innovation (VESKI). Fabrication work was performed at the Center for Nanoscale Systems (CNS) at Harvard, which is supported by the NSF.