Elliptical silicon nanowire photodetectors for polarization-resolved imaging

Abstract

Polarization-resolved imaging offers many advantages over conventional imaging because it provides additional information on materials and scenes. In this study, we present an image sensor pixel for polarization-resolved imaging based on an all-silicon nanowire device. As the structure has an intrinsically polarization-dependent response, it is not necessary to employ a polarizer. We fabricate pixels consisting of etched vertical silicon nanowires with elliptical cross-sections that incorporate vertical p-i-n junctions. Our photocurrent measurement reveals that the spectral responsivities are dependent on the polarization state of incident light. Polarization-resolved imaging is performed wi..