Journal article

Vertically Stacked Photodetector Devices Containing Silicon Nanowires with Engineered Absorption Spectra

Hyunsung Park, Kenneth B Crozier

ACS PHOTONICS | AMER CHEMICAL SOC | Published : 2015

Abstract

We fabricate a vertically stacked photodetector device containing silicon nanowire photodetectors formed above a silicon substrate that also contains a photodetector. The nanowire photodetectors have absorption spectra that exhibit peaks for which light is coupled to a waveguide mode, absorbed, and converted to photocurrent. The substrate photodetector converts the light not absorbed by the nanowires to photocurrent. Responsivities of both photodetectors are measured and compared to the predictions of electromagnetic simulations. This device configuration can be thought of as a silicon photodetector with an integrated filter. The filter has the unusual property of converting absorbed light t..

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University of Melbourne Researchers

Grants

Awarded by National Science Foundation (NSF)


Awarded by Australian Research Council


Awarded by Directorate For Engineering


Funding Acknowledgements

This work was supported in part by the National Science Foundation (NSF, grant no. ECCS-1307561), by the Australian Research Council's Discovery Projects funding scheme (project number DP150103736), and by the Victorian Endowment for Science, Knowledge and Innovation (VESKI). Fabrication work was performed at the Center for Nanoscale Systems (CNS) at Harvard, which is supported by the NSF.