Journal article

Structural transformation of implanted diamond layers during high temperature annealing

S Rubanov, BA Fairchild, A Suvorova, P Olivero, S Prawer

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms | ELSEVIER SCIENCE BV | Published : 2015


In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550°C results in a partial graphitization of the..

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